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Flash Memory Programming Characteristics
= −40 to +85°C, 4.0 V ≤ V
(T
A
Basic characteristics
V
supply current
DD
Erase time
Write time (in 8-bit units)
Number of rewrites per chip
Notes 1.
2.
3.
Remarks 1. f
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CHAPTER 22 ELECTRICAL SPECIFICATIONS (TARGET)
= EV
DD
DD
Parameter
Symbol
I
DD
Notes 1, 2
All block
T
eraca
Block unit
T
erasa
Note 1
T
wrwa
C
erwr
These are characteristics of the flash memory.
dedicated flash programmer (PG-FP4) or by self programming.
The prewrite time before erasure and the erase verify time (writeback time) are not included.
When a product is first written after shipment, "erase → write" and "write only" are both taken as one
rewrite.
: Main system clock oscillation frequency
XP
2. For serial write operation characteristics, refer to 78K0/Kx2 Flash Memory Programming
(Programmer) Application Note (U17739E).
≤ 5.5 V, V
= EV
= 0 V)
SS
SS
Conditions
f
= 17.6 MHz (MAX.)
XP
Retention: 15 years
1 erase + 1 write after erase = 1 rewrite
These characteristic are not the rewrite time by a
Preliminary User's Manual U19014EJ1V0UD
MIN.
TYP.
MAX.
4.5
11.0
10
200
10
200
10
100
100
Note 3
Unit
mA
ms
ms
µ
s
Times
501
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