Characteristics Of Low Voltage Detect Circuit - Samsung S3C80A5B User Manual

ELECTRICAL DATA
°
(T = 25 C)
A
Parameter
Hysteresys voltage of LVD
(Slew Rate of LVD)
Low level detect voltage (S3C80A5B)
°
(T = – 25 C to + 85
A
Parameter
Data retention supply
voltage
Data retention supply
current
°
(T = – 25 C to + 85
A
Parameter
Input
capacitance
Output
capacitance
I/O capacitance
°
(T = – 25 C to + 85
A
Parameter
Interrupt input,
High, Low width
4
13-
Table 13-3. Characteristics of Low Voltage Detect circuit
Table 13-4. Data Retention Supply Voltage in Stop Mode
°
C)
Symbol
V
DDDR
I
DDDR
Table 13-5. Input/output Capacitance
°
C, V = 0 V)
DD
Symbol Conditions
C f = 1 MHz; unmeasured pins
IN
are connected to V
C
OUT
C
IO
Table 13-6. A.C. Electrical Characteristics
°
C)
Symbol Conditions
t P0.0–P0.7, V
,
INTH
t
INTL
Symbol Conditions
∆V
–
V –
LVD
Conditions
–
V = 1.0 V
DDDR
Stop mode
SS
= 3.6 V
DD
Min Typ
– 30
2.0 2.20
Min Typ
1.0 –
– –
Min Typ
– –
Min Typ
200 300
3C80A5B
Max Unit
300 mV
2.40 V
Max Unit
5.5 V
1 µA
Max Unit
10 pF
Max Unit
– ns