Samsung S3C80A5B User Manual page 159

8-bit cmos
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S3C80A5B
LDC/LDE
— Load Memory
LDC/LDE
(Continued)
Examples:
Given: R0 = 11H, R1 = 34H, R2 = 01H, R3 = 04H; Program memory locations
0103H = 4FH, 0104H = 1A, 0105H = 6DH, and 1104H = 88H. External data memory locations
0103H = 5FH, 0104H = 2AH, 0105H = 7DH, and 1104H = 98H:
LDC
LDE
(note)
LDC
LDE
LDC
LDE
(note)
LDC
LDE
LDC
LDE
LDC
LDE
(note)
LDC
LDE
NOTE:
These instructions are not supported by masked ROM type devices.
; R0 ← contents of program memory location 0104H
R0,@RR2
; R0 = 1AH, R2 = 01H, R3 = 04H
; R0 ← contents of external data memory location 0104H
R0,@RR2
; R0 = 2AH, R2 = 01H, R3 = 04H
@RR2,R0
; 11H (contents of R0) is loaded into program memory
; location 0104H (RR2),
; working registers R0, R2, R3 → no change
@RR2,R0
; 11H (contents of R0) is loaded into external data memory
; location 0104H (RR2),
; working registers R0, R2, R3 → no change
; R0 ← contents of program memory location 0105H
R0,#01H[RR2]
; (01H + RR2),
; R0 = 6DH, R2 = 01H, R3 = 04H
; R0 ← contents of external data memory location 0105H
R0,#01H[RR2]
; (01H + RR2), R0 = 7DH, R2 = 01H, R3 = 04H
#01H[RR2],R0
; 11H (contents of R0) is loaded into program memory location
; 0105H (01H + 0104H)
#01H[RR2],R0
; 11H (contents of R0) is loaded into external data memory
; location 0105H (01H + 0104H)
; R0 ← contents of program memory location 1104H
R0,#1000H[RR2]
; (1000H + 0104H), R0 = 88H, R2 = 01H, R3 = 04H
; R0 ← contents of external data memory location 1104H
R0,#1000H[RR2]
; (1000H + 0104H), R0 = 98H, R2 = 01H, R3 = 04H
; R0 ← contents of program memory location 1104H, R0 = 88H
R0,1104H
; R0 ← contents of external data memory location 1104H,
R0,1104H
; R0 = 98H
1105H,R0
; 11H (contents of R0) is loaded into program memory location
; 1105H, (1105H) ← 11H
1105H,R0
; 11H (contents of R0) is loaded into external data memory
; location 1105H, (1105H) ← 11H
INSTRUCTION SET
6-53

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