Ldci/Ldei Load Memory And Increment - Samsung S3C80A5B User Manual

8-bit cmos
Table of Contents

Advertisement

S3C80A5B
LDCI/LDEI
— Load Memory and Increment
LDCI/LDEI
dst,src
dst ← src
Operation:
rr ← rr + 1
These instructions are used for user stacks or block transfers of data from program or data memory
to the register file. The address of the memory location is specified by a working register pair. The
contents of the source location are loaded into the destination location. The memory address is
then incremented automatically. The contents of the source are unaffected.
LDCI refers to program memory and LDEI refers to external data memory. The assembler makes 'Irr'
even for program memory and odd for data memory.
Flags:
No flags are affected.
Format:
opc
Examples:
Given: R6 = 10H, R7 = 33H, R8 = 12H, program memory locations 1033H = 0CDH and
1034H = 0C5H; external data memory locations 1033H = 0DDH and 1034H = 0D5H:
LDCI
LDEI
dst | src
R8,@RR6
; 0CDH (contents of program memory location 1033H) is loaded
; into R8 and RR6 is incremented by one (RR6 ← RR6 + 1)
; R8 = 0CDH, R6 = 10H, R7 = 34H
R8,@RR6
; 0DDH (contents of data memory location 1033H) is loaded
; into R8 and RR6 is incremented by one (RR6 ← RR6 + 1)
; R8 = 0DDH, R6 = 10H, R7 = 34H
Bytes
Cycles
Opcode
2
10
INSTRUCTION SET
Addr Mode
(Hex)
dst
src
E3
r
Irr
6-55

Advertisement

Table of Contents
loading

Table of Contents