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• Ability to read the flash memory while programming a word in the EEPROM
memory
• Flexible protection scheme to prevent accidental program or erase of flash memory
EEPROM features:
• 256 bytes of EEPROM memory composed of one 256 byte EEPROM block divided
into 128 sectors of 2 bytes
• Single bit fault correction and double bit fault detection within a word during read
operations
• Automated program and erase algorithm with verification and generation of ECC
parity bits
• Fast sector erase and byte program operation
• Protection scheme to prevent accidental program or erase of EEPROM memory
• Ability to program up to four bytes in a burst sequence
Other features
• No external high-voltage power supply required for flash memory program and erase
operations
• Interrupt generation on flash command completion and flash error detection
• Security mechanism to prevent unauthorized access to the flash memory
4.5.2 Function descriptions
4.5.2.1 Modes of operation
The flash and EEPROM module provides the normal user mode of operation. The
operating mode is determined by module-level inputs and affects the FCLKDIV,
FCNFG, and EEPROT registers.
4.5.2.1.1 Wait mode
The flash and EEPROM module is not affected if the MCU enters wait mode. The flash
module can recover the MCU from wait via the CCIF interrupt. See
interrupts.
4.5.2.1.2 Stop mode
If a flash and EEPROM command is active, that is, FSTAT[CCIF] = 0, when the MCU
requests stop mode, the current NVM operation will be completed before the MCU is
allowed to enter stop mode.
Freescale Semiconductor, Inc.
MC9S08PT60 Reference Manual, Rev. 4, 08/2014
Chapter 4 Memory map
Flash and EEPROM
79
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