Flash Memory Characteristics - Texas Instruments MSPM0G350 Series Manual

MSPM0G3507-Q1, MSPM0G3506-Q1, MSPM0G3505-Q1
SLASF88 – OCTOBER 2023
POR
BOR0+
BOR0-
POR+
POR-

7.7 Flash Memory Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER
Supply
VDD Program and erase supply voltage
PGM/ERASE
Supply current from VDD during erase
IDD
ERASE
operation
Supply current from VDD during
IDD
PGM
program operation
Endurance
Erase/program cycle endurance (lower
NWEC
(LOWER)
32kB flash)
Erase/program cycle endurance
NWEC
(UPPER)
(remaining flash)
NE Total erase operations before failure
(MAX)
Write operations per word line before
NW
(MAX)
sector erase
Retention
t Flash memory data retention
RET_85
t Flash memory data retention
RET_105
Program and Erase Timing
t Program time for flash word
PROG (WORD, 64)
t Program time for 1kB sector
PROG (SEC, 64)
t Sector erase time
ERASE (SEC)
t Sector erase time
ERASE (SEC)
t Sector erase time
ERASE (SEC)
t Bank erase time
ERASE (BANK)
(1) The lower 32kB flash address space supports higher erase/program endurance to enable EEPROM emulation applications. On
devices with <=32kB flash memory, the entire flash memory supports NWEC
(2) Total number of cumulative erase operations supported by the flash before failure. A sector erase or bank erase operation is
considered to be one erase operation.
(3) Maximum number of write operations allowed per word line before the word line must be erased. If additional writes to the same word
line are required, a sector erase is required once the maximum number of write operations per word line is reached.
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BOR Running
No reset
asserted
BOR BOR
released asserted
POR
released
POR/BOR levels are met
for specified |dVDD/dt|
Figure 7-1. Power Cycle POR and BOR Conditions
Supply current delta
Supply current delta
(1)
(1)
(2)
(3)
-40°C <= Tj <= 85°C
-40°C <= Tj <= 105°C
(4) (6)
(5) (6)
≤2k erase/program cycles,
T
≤10k erase/program cycles,
T
<10k erase/program cycles
<10k erase/program cycles
Product Folder Links: MSPM0G3507-Q1 MSPM0G3506-Q1 MSPM0G3505-Q1
BOR Running
BOR
released
POR
asserted
Time (t)
TEST CONDITIONS
≥25°C
j
≥25°C
j
erase/program cycles.
(LOWER)
POR BOR Running
BOR
released
POR
released
MIN TYP MAX
1.62 3.6
10
10
100 k cycles
10 k cycles
802 k erase operations
83 write operations
60
11.4
50 275
6.4
4 20
20 150
20 200
22 220
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UNIT
V
mA
mA
years
years
µs
ms
ms
ms
ms
ms