Operating Conditions; General Operating Conditions; Table 12. Thermal Characteristics; Table 13. General Operating Conditions - STMicroelectronics STM32L151RE Manual

Electrical characteristics
4. Positive current injection is not possible on these I/Os. A negative injection is induced by V
exceeded. Refer to Table 10
5. A positive injection is induced by V
exceeded. Refer to Table 10: Voltage characteristics
6. When several inputs are submitted to a current injection, the maximum ΣI
negative injected currents (instantaneous values).
Symbol
T
STG
T
J
6.3

Operating conditions

6.3.1

General operating conditions

Symbol
f Internal AHB clock frequency
HCLK
f Internal APB1 clock frequency
PCLK1
f Internal APB2 clock frequency
PCLK2
V Standard operating voltage
DD
Analog operating voltage
(ADC and DAC not used)
(1)
V
DDA
Analog operating voltage
(ADC or DAC used)
V I/O input voltage
IN
Power dissipation at TA = 85 °C for
P
D
suffix 6 or TA = 105 °C for suffix 7
Ambient temperature for 6 suffix version Maximum power dissipation
T
A
Ambient temperature for 7 suffix version Maximum power dissipation
60/134
for maximum allowed input voltage values.
> V while a negative injection is induced by V
IN DD

Table 12. Thermal characteristics

Ratings
Storage temperature range
Maximum junction temperature

Table 13. General operating conditions

Parameter
(4)
DocID025433 Rev 8
for the maximum allowed input voltage values.
INJ(PIN)
Conditions
-
-
-
BOR detector disabled
BOR detector enabled, at
power on
BOR detector disabled, after
power on
Must be the same voltage as
(2)
V
DD
FT pins; 2.0 V ≤ V
DD
< 2.0 V
FT pins; V
DD
BOOT0 pin
Any other pin
UFBGA132 package
LQFP144 package
LQFP100 package
LQFP64 package
WLCSP104 package
STM32L151xE STM32L152xE
<V . I must never be
IN SS INJ(PIN)
< V . I must never be
IN SS INJ(PIN)
is the absolute sum of the positive and
Value
–65 to +150
150
Min Max
0 32
0 32
0 32
1.65 3.6
1.8 3.6
1.65 3.6
1.65 3.6
1.8 3.6
-0.3 5.5
-0.3 5.25
0 5.5
-0.3 V
DD
- 333
- 500
- 465
- 435
- 435
(5)
–40 85
–40 105
Unit
°C
°C
Unit
MHz
V
V
(3)
(3)
V
+0.3
mW
°C