Internal Clock Source Characteristics; Table 29. Table; Table 31. Lsi Oscillator Characteristics - STMicroelectronics STM32L151RE Manual

Ultra-low -power 32-bit mcu arm-based cortex-m3 with 512kb flash, 80kb sram, 16kb eerom, lcd, usb, adc, dac
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STM32L151xE STM32L152xE
6.3.7

Internal clock source characteristics

The parameters given in
summarized in
High-speed internal (HSI) RC oscillator
Symbol
f
HSI
(1)(2)
TRIM
(2)
ACC
HSI
(2)
t
SU(HSI)
(2)
I
DD(HSI)
1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are
multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).
2. Guaranteed by characterization results.
3. Guaranteed by test in production.
Low-speed internal (LSI) RC oscillator
Symbol
(1)
f
LSI
(2)
D
LSI
(3)
t
su(LSI)
(3)
I
DD(LSI)
1. Guaranteed by test in production.
2. This is a deviation for an individual part, once the initial frequency has been measured.
3. Guaranteed by design.
Table 30
Table
13.
Table 30. HSI oscillator characteristics
Parameter
Frequency
V
DD
Trimming code is not a multiple of 16
HSI user-trimmed
resolution
Trimming code is a multiple of 16
V
DDA
V
DDA
V
Accuracy of the
DDA
factory-calibrated
V
DDA
HSI oscillator
V
DDA
V
DDA
T
A
HSI oscillator
startup time
HSI oscillator
power consumption

Table 31. LSI oscillator characteristics

Parameter
LSI frequency
LSI oscillator frequency drift
0°C ≤ T
≤ 105°C
A
LSI oscillator startup time
LSI oscillator power consumption
DocID025433 Rev 8
are derived from tests performed under the conditions
Conditions
= 3.0 V
= 3.0 V, T
= 25 °C
A
= 3.0 V, T
= 0 to 55 °C
A
= 3.0 V, T
= -10 to 70 °C
A
= 3.0 V, T
= -10 to 85 °C
A
= 3.0 V, T
= -10 to 105 °C
A
= 1.65 V to 3.6 V
= -40 to 105 °C
-
-
Min
26
-10
-
-
Electrical characteristics
Min
Typ
Max
-
16
-
± 0.4
-
0.7
± 1.5
-
-
(3)
(3)
-1
-
1
-1.5
-
1.5
-2
-
2
-2.5
-
2
-4
-
2
-4
-
3
-
3.7
6
-
100
140
Typ
Max
Unit
38
56
-
4
-
200
400
510
Unit
MHz
%
%
%
%
%
%
%
%
µs
µA
kHz
%
µs
nA
81/134
113

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