STM32L151x6/8/B, STM32L152x6/8/B
6.3.13
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in
performed under conditions summarized in
Symbol
Parameter
V
Input low level voltage
IL
V
Input high level voltage
IH
I/O Schmitt trigger voltage
V
(2)
hys
hysteresis
I
Input leakage current
lkg
R
Weak pull-up equivalent resistor
PU
R
Weak pull-down equivalent resistor
PD
C
I/O pin capacitance
IO
1. Tested in production
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
3. With a minimum of 200 mV. Based on characterization, not tested in production.
4. With a minimum of 100 mV. Based on characterization, not tested in production.
5. The max. value may be exceeded if negative current is injected on adjacent pins.
6. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
MOS/NMOS contribution to the series resistance is minimum (~10% order).
Table 42. I/O static characteristics
Conditions
-
Standard I/O
Standard I/O
V
SS
I/Os with LCD
V
SS
I/Os with analog
switches
V
SS
I/Os with analog
(5)
switches and LCD
V
SS
I/Os with USB
V
DD
V
SS
Standard I/Os
(6)(1)
V
(6)
V
-
DocID17659 Rev 10
Table 42
Table
13. All I/Os are CMOS and TTL compliant.
Min
-
-
0.7 V
DD
FT I/O
-
FT I/O
-
V
V
≤
≤
IN
DD
-
V
V
≤
≤
IN
DD
-
V
V
≤
≤
IN
DD
-
V
V
≤
≤
IN
DD
-
FT I/O
-
V
5V
≤
≤
IN
V
V
≤
≤
IN
DD
-
V
30
=
IN
SS
V
30
=
IN
DD
-
-
Electrical characteristics
are derived from tests
Typ
Max
(1)
-
0.3V
DD
-
-
-
-
(3)
10% V
-
DD
(4)
5% V
-
DD
-
±50
-
±50
-
±50
-
TBD
-
TBD
-
±50
45
60
45
60
5
-
Unit
V
nA
kΩ
kΩ
pF
81/129
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