Epson S1C17W22 Technical Manual page 293

Cmos 16-bit single chip microcontroller
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23.6 Flash Memory Characteristics
Unless otherwise specified: V
DD
Item
Programming count
*2
*1 The potential variation of the V
mounting board while the Flash is being programmed, as it affects the Flash memory characteristics (programming count).
*2 Assumed that Erasing + Programming as count of 1. The count includes programming in the factory for shipment with ROM data
programmed.
23.7 Input/Output Port (PPORT) Characteristics
Unless otherwise specified: V
DD
Item
High level Schmitt input
threshold voltage
Low level Schmitt input threshold
voltage
Schmitt input hysteresis voltage DV
High level output current
Low level output current
Leakage current
Input pull-up resistance
Input pull-down resistance
Pin capacitance
High-level output current characteristic
Ta = 85 °C, Max. value
V
DD
0.0
0.1
0.2
0.3
0.4
0
-2
-4
-6
-8
-10
S1C17W22/W23 TECHNICAL MANUAL
(Rev. 1.3)
= 1.8 to 3.6 V, V
= 0 V
, Ta = -40 to 85 °C
*1
SS
Symbol
C
Programmed data is guaranteed to be
FEP
retained for 10 years.
voltage should be suppressed to within ±0.3 V on the basis of the ground potential of the MCU
SS
= 1.2 to 3.6 V, V
= 0 V, Ta = -40 to 85 °C
SS
Symbol
Condition
V
P00–07, P10–17, P20–27, P30–37, P40–44, PD0–
T+
D1, PD3–D4
V
P00–07, P10–17, P20–27, P30–37, P40–44, PD0–
T-
D1, PD3–D4
P00–07, P10–17, P20–27, P30–37, P40–44, PD0–
T
D1, PD3–D4
I
P00–07, P10–17, P20–27, P30–37,
OH
P40–44, PD0–D4, V
I
P00–07, P10–17, P20–27, P30–37,
OL
P40–44, PD0–D4, V
I
P00–07, P10–17, P20–27, P30–37, P40–44, PD0–D4
LEAK
R
P00–07, P10–17, P20–27, P30–37, P40–44, PD0–
INU
D1, PD3–D4
R
P00–07, P10–17, P20–27, P30–37, P40–44, PD0–
IND
D1, PD3–D4
C
P00–07, P10–17, P20–27, P30–37, P40–44, PD0–
IN
D1, PD3–D4
High level
Low level
0
V
(∗ For over voltage tolerant fail-safe type port)
–V
[V]
OH
0.5
0.6
0.7
0.8
0.9
1.0
V
= 1.2 V
DD
V
= 1.6 V
DD
V
= 3.6 V
DD
Seiko Epson Corporation
23 ELECTRICAL CHARACTERISTICS
Condition
V
DD
1.2 to 1.6 V
= 0.9 × V
1.6 to 3.6 V
OH
DD
1.2 to 1.6 V
= 0.1 × V
1.6 to 3.6 V
OL
DD
-
V
+
V
4.0 V*
T
T
DD
Input voltage [V]
Low-level output current characteristic
Ta = 85 °C, Min. value
10
8
6
4
2
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Min.
Typ.
Max.
50
Min.
Typ.
Max.
0.5 × V
0.8 × V
DD
DD
0.2 × V
0.5 × V
DD
DD
120
-0.3
-0.5
0.3
0.5
-150
150
75
150
300
75
150
300
15
V
= 3.6 V
DD
V
= 1.6 V
DD
V
= 1.2 V
DD
V
[V]
OL
Unit
times
Unit
V
V
mV
mA
mA
mA
mA
nA
kW
kW
pF
23-7

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