Electrostatic Discharge - Quectel RM510Q-GL Hardware Design

Table 44: (U)SIM 1.8 V I/O Requirements
Parameter Description
USIM1_VDD Power supply
V Input high voltage
IH
V Input low voltage
IL
V Output high voltage
OH
V Output low voltage
OL
Table 45: (U)SIM 3.0 V I/O Requirements
Parameter Description
USIM1_VDD Power supply
V Input high voltage
IH
V Input low voltage
IL
V Output high voltage
OH
V Output low voltage
OL

6.4. Electrostatic Discharge

The module is not protected against electrostatic discharge (ESD) in general. Consequently, it is subject
to ESD handling precautions that typically apply to ESD sensitive components. Proper ESD handling and
packaging procedures must be applied throughout the processing, handling and operation of any
application that incorporates the module.
Table 46: Electrostatic Discharge Characteristics (Temperature: 25 º C, Humidity: 40 %)
Tested Interfaces
VCC, GND
Antenna Interfaces
Other Interfaces
RM510Q-GL_Hardware_Design
Min.
1.65
0.7 × USIM1_VDD
-0.3
0.8 × USIM1_VDD
0
Min.
2.7
0.7 × USIM1_VDD
-0.3
0.8 × USIM1_VDD
0
Contact Discharge
± 5
± 4
± 0.5
RM510Q-GL Hardware Design
Max.
1.95
USIM1_VDD + 0.3
0.2 × USIM1_VDD
USIM1_VDD
0.4
Max.
3.05
USIM1_VDD + 0.3
0.2 × USIM1_VDD
USIM1_VDD
0.4
Air Discharge
± 10
± 8
± 1
5G Module Series
Unit
V
V
V
V
V
Unit
V
V
V
V
V
Unit
kV
kV
kV
78 / 87