Electrostatic Discharge; Thermal Dissipation - Quectel RM510Q-GL Hardware Design

V Input low voltage
IL
V Output high voltage
OH
V Output low voltage
OL
Table 49: (U)SIM 3.0 V I/O Requirements
Parameter Description
USIM_VDD Power supply
V Input high voltage
IH
V Input low voltage
IL
V Output high voltage
OH
V Output low voltage
OL

6.4. Electrostatic Discharge

The module is not protected against electrostatic discharge (ESD) in general. Consequently, it is subject
to ESD handling precautions that typically apply to ESD sensitive components. Proper ESD handling and
packaging procedures must be applied throughout the processing, handling and operation of any
application that incorporates the module.
Table 50: Electrostatic Discharge Characteristics (Temperature: 25 º C, Humidity: 40 %)
Tested Interfaces
VCC, GND
Antenna Interfaces
Other Interfaces

6.5. Thermal Dissipation

RM510Q-GL are designed to work over an extended temperature range. To achieve a maximum
RM510Q-GL_Hardware_Design
-0.3
0.8 × USIM_VDD
0
Min.
2.7
0.7 × USIM_VDD
-0.3
0.8 × USIM_VDD
0
Contact Discharge
± 5
± 4
± 0.5
RM510Q-GL Hardware Design
0.2 × USIM_VDD
USIM_VDD
0.4
Max.
3.05
USIM_VDD + 0.3
0.2 × USIM_VDD
USIM_VDD
0.4
Air Discharge
± 10
± 8
± 1
5G Module Series
V
V
V
Unit
V
V
V
V
V
Unit
kV
kV
kV
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