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Table 43: (U)SIM 3.0V I/O Requirements
Parameter
Description
USIM_VDD
Power supply
V
Input high voltage
IH
V
Input low voltage
IL
V
Output high voltage
OH
V
Output low voltage
OL
6.4. Electrostatic Discharge
The module is not protected against electrostatic discharge (ESD) in general. Consequently, it is subject
to ESD handling precautions that typically apply to ESD sensitive components. Proper ESD handling and
packaging procedures must be applied throughout the processing, handling and operation of any
application that incorporates the module.
Table 44: Electrostatic Discharge Characteristics (Temperature: 25 º C, Humidity: 40 %)
Tested Interfaces
VCC, GND
Antenna Interfaces
Other Interfaces
6.5. Thermal Dissipation
The module is designed to work in an extended temperature range. To achieve a maximum performance
while working under extended temperatures or extreme conditions (such as with maximum power or data
rate) for a long time, it is strongly recommended to add a thermal pad or other thermally conductive
compounds between the module and the main PCB for thermal dissipation.
The thermal dissipation area on the bottom (i.e. the area for adding thermal pad) is shown below, and
thermal paste are also added on the BB, MCP, PMIC, WTR, PA-1, PA-2 chips inside the module. The
dimensions are measured in mm.
RM502Q-GL_Hardware_Design
Min.
2.7
0.7 × USIM_VDD
-0.3
0.8 × USIM_VDD
0
Contact Discharge
± 5
± 4
± 0.5
RM502Q-GL Hardware Design
Max.
3.05
USIM_VDD + 0.3
0.2 × USIM_VDD
USIM_VDD
0.4
Air Discharge
± 10
± 8
± 1
5G Module Series
Unit
V
V
V
V
V
Unit
kV
kV
kV
75 / 83
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