Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 94

4gb flex-muxonenand m-die flash memory
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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
3.13.1 OTP Block Load Operation
An OTP Block Load Operation accesses the OTP area and transfers identified content from the OTP to the DataRAM on-chip buffer,
thus making the OTP contents available to the Host.
The OTP area is a separate part of the NAND Flash Array memory. It is accessed by issuing OTP Access command(65h) instead of
a Flash Block Address (FBA) value in Start Address1 Register.
.
After being accessed with the OTP Access Command, the contents of OTP memory area are loaded using the same operations as a normal
load operation to the NAND Flash Array memory (see section 3.6 for more information).
To exit the OTP access mode after an OTP Block Load Operation, a Cold-, Warm-, Hot-, or NAND Flash Core Reset operation is performed.
OTP Block Read Operation Flow Chart
NOTE :
1) FBA(NAND Flash Block Address) could be omitted or any address
2) 'Write 0 to interrupt register' step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
3) BSA must be 1000 and BSC must be 000.
Start
1)
Write 'DFS*, FBA' of Flash
Add: F100h DQ=DFS*, FBA
Select DataRAM for DDP
Add: F101h DQ=DBS*
2)
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 'OTP Access' Command
Add: F220h DQ=0065h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write 'FPA, FSA' of Flash
Add: F107h DQ=FPA, FSA
Write 'BSA, BSC' of DataRAM
3)
Add: F200h DQ=0800h
* DBS, DFS is for DDP
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 'Load' Command
Add: F220h
DQ=0000h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Host reads data from
DataRAM
OTP Reading completed
Do Cold/Warm/Hot
/NAND Flash Core Reset
OTP Exit
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FLASH MEMORY
2)

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