Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 81

4gb flex-muxonenand m-die flash memory
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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
3.10 Copy-Back Program Operation with Random Data Input
The Copy-Back Program Operation with Random Data Input in Flex-MuxOneNAND consists of 3 phases, Load data into DataRAM, Modify
data and program into designated page. Data from the source page is saved in one of the on-chip DataRAM buffers and modified by the host,
then programmed into the destination page.
As shown in the flow chart, data modification is possible upon completion of load operation. ECC is also available at the end of load operation.
Therefore, using hardware ECC of Flex-MuxOneNAND, accumulation of 4 bit error can be avoided.
Copy-Back Program Operation with Random Data Input will be effectively utilized at modifying certain bit, byte, word, or sector of source page
to destination page while it is being copied.
Copy-Back Program Operation with Random Data Input Flow Chart
Start
Write 'DFS*, FBA' of Flash
Add: F100h DQ=DFS, FBA
Select DataRAM for DDP
Add: F101h DQ=DBS
Write 'FPA, FSA' of Flash
Add: F107h DQ=FPA, FSA
1)
Write 'BSA
, BSC' of DataRAM
Add: F200h DQ=0800h
Write System Configuration
3)
Register
Add: F221h DQ=ECC
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 'Load' Command
Add: F220h DQ=0000h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Map Out
NOTE :
1) BSA must be 1000.
2) FSA must be 00 and BSC must be 000 within program operation.
3) Writing System Configuration Register is optional.
4) 'Write 0 to interrupt register' step may be ignored when using INT auto mode. Refer to chapter 2.8.18.1
Read ECC Status Register1
Add: FF00h DQ=ER1[12:8], ER0[4:0]
Read ECC Status Register2
Add: FF01h DQ=ER3[12:8], ER2[4:0]
Read ECC Status Register3
Add: FF02h DQ=ER5[12:8], ER4[4:0]
Read ECC Status Register4
Add: FF03h DQ=ER7[12:8], ER6[4:0]
2)
NO
DQ[10]=0?
Random Data Input
Add: Random Address in
4)
Selected DataRAM
DQ=Data
Write 'DFS, FBA' of Flash
Add: F100h DQ=DFS, FBA
Read Write Protection Status
Add: F24Eh DQ=US,LS,LTS
Write 'FPA, FSA' of Flash
Add: F107h DQ=FPA, FSA
1)
Write 'BSA
, BSC' of DataRAM
Add: F200h DQ=0800h
- 81 -
Write System Configuration
Add: F221h DQ=ECC
Write 0 to interrupt register
Add: F241h DQ=0000h
Write 'Program' Command
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
YES
Add: F240h DQ[10]=Error
NO
Copy back completed
Copy back Error
2)
2)
* DBS, DFS is for DDP
FLASH MEMORY
3)
Register
4)
Add: F220h
DQ=0080h
Read Controller
Status Register
DQ[10]=0?
YES

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