Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 83

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
1)
Erase Interleave (@DDP) Flow Chart
Start
Write 'DFS*, FBA' of Flash
Add: F100h DQ=DFS*, FBA
Select DataRAM for DDP
Add: F101h DQ=DBS*
Write 'Erase' Command
Add: F220h DQ=0094h
{
Select DataRAM for DDP
Add: F101h DQ=DBS*
*
1
Check for INT register high
Add: F241h DQ[15]=INT
INT=1(Ready)
Write 'DFS*, FBA' of Flash
Add: F100h DQ=DFS*, FBA
Select DataRAM for DDP
Add: F101h DQ=DBS*
Write 'Erase' Command
Add: F220h DQ=0094h
Erase Interleave can work in Auto INT Mode.
*
Interrupt register must not be written.
*
1
Check the chip status before command issues.
*
Previous Erase Status Check
2
DBS must be changed to indicate chip.
*
3
Final Erase Status Check
NOTE :
1) Erase Suspend and Erase Resume Operations are not supported in Erase Interleave(@DDP).
{
Select DataRAM for DDP
Add: F101h DQ=DBS*
Wait for INT register
*
low to high transition
2
Add: F241h DQ=[5]=EI
Read Controller status register
Add: F240 DQ[10]=Error
YES(Erase Pass)
DQ[10]=0?
NO(Erase Fail)
Erase Error
Erase has been issued prior to current erase ongoing
- 83 -
FLASH MEMORY
NO
Has Final Erase
command been issued?
(Final Erase status check)
Select DataRAM for DDP
Add: F101h DQ=DBS*
Wait for INT register
low to high transition
Add: F241h DQ[5]=EI
Read Controller status register
Add: F240h DQ[10]=Error
NO(Erase Fail)
DQ[10]=0?
YES(Erase Pass)
Erase completed
YES
}
*
3