Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 109

4gb flex-muxonenand m-die flash memory
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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
4.3 DC Characteristics
Parameter
Input Leakage Current
Output Leakage Current
Active Asynchronous Read Current
(Note 2)
Active Burst Read Current (Note 2)
Active Burst Write Current (Note 2)
Active Asynchronous Write Current
(Note 2)
Active Load Current (Note 3)
Active Program Current (Note 3)
Active Erase Current (Note 3)
Standby Current
Input Low Voltage
Input High Voltage (Note 4)
Output Low Voltage
Output High Voltage
NOTE :
1) CE should be VIH for RDY. IOBE should be '0' for INT.
2) I
active for Host access
CC
3) I
active for Internal operation. (without host access)
CC
4) Vccq is equivalent to Vcc-IO
Symbol
Test Conditions
I
V
=V
to V
, V
LI
IN
SS
CC
CC
V
=V
to V
, V
OUT
SS
CC
CC
I
LO
CE or OE=V
(Note 1)
IH
I
CE=V
, OE=V
CC1
IL
IH
I
CE=V
, OE=V
, WE=V
CC2R
IL
IH
I
CE=V
, OE=V
WE=V
CC2W
IL
IH,
I
CE=V
, OE=V
CC3
IL
IH
I
CE=V
, OE=V
, WE=V
CC4
IL
IH
I
CE=V
, OE=V
, WE=V
CC5
IL
IH
I
CE=V
, OE=V
, WE=V
CC6
IL
IH
± 0.2V
I
CE= RP=V
SB
CC
V
-
IL
V
-
IH
= 100 µA ,V
V
I
=V
OL
OL
CC
= -100 µA , V
V
I
=V
OH
OH
CC
- 109 -
Min
- 1.0
Single
=V
CCmax
- 2.0
DDP
- 1.0
Single
=V
,
CCmax
- 2.0
DDP
-
66MHz
-
83MHz
-
1MHz
-
66MHz
-
IH
(DDP)
83MHz
-
(DDP)
1MHz
-
(DDP)
66MHz
-
83MHz
-
1MHz
-
66MHz
-
IL
(DDP)
83MHz
-
(DDP)
1MHz
-
(DDP)
-
Single
-
DDP
-
IH
-
IH
-
IH
-
Single
-
DDP
-0.5
V
CCq
0.4
, V
=V
-
CCmin
CCq
CCqmin
V
CCq
, V
=V
CCmin
CCq
CCqmin
0.1
FLASH MEMORY
RMS Value
Unit
Typ
Max
-
+ 1.0
µA
-
+ 2.0
-
+ 1.0
µA
+ 2.0
8
15
mA
20
30
mA
25
35
mA
3
4
mA
22
35
mA
26
40
mA
3
4
mA
20
30
mA
25
35
mA
3
4
mA
22
35
mA
26
40
mA
3
4
mA
8
15
mA
17
25
mA
50
65
mA
35
45
mA
40
50
mA
10
50
µA
20
100
-
0.4
V
-
V
+0.
CCq
-
V
4
-
0.2
V
-
-
-
V

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