Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 62

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
3.4.3.3 Locked-tight NAND Array Write Protection State
A block that is in a locked-tight state can only be changed to locked state after a Cold or Warm Reset. Unlock and Lock command sequences
will not affect its state. This is an added level of write protection security.
A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command. locked-tight blocks will revert
to a locked state following a Cold or Warm Reset.
When there are Lock-tight blocks in the flash array, All Block Unlock Command will fail and there will be no change in the lock status of the
blocks of the Flash array.
Thus, All Block Unlock command succeeds only when there are no tightly-locked blocks in Flash.
Locked-tight
3.4.4 NAND Flash Array Write Protection State Diagram
Start block address
Lock block Command
Start block address
+Lock-tight block Command
Lock-Tight Command Sequence:
Start block address+Lock-tight block command (002Ch)
RP pin: High
&
or
Cold reset or
Warm reset
RP pin: High
&
Lock-tight
*
NOTE : If the 1st Block is set to be OTP, Block 0 will always be Lock Status
unlock
RP pin: High
&
Start block address (000h)
+All Block Unlock Command
Lock
unlock
Lock
RP pin: High
Start block address
+Unlock block Command
Lock
Cold reset or
Warm reset
Lock
Lock
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FLASH MEMORY
&
Power On