Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 114

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
5.9 AC Characteristics for Load/Program/Erase Performance
See Timing Diagrams 6.9, 6.10, 6.11, 6.12, 6.13 and 6.14
Parameter
Sector Load time(Note 1)
Page Load time(Note 1)
Page Program time(Note 1)
OTP Access Time(Note 1)
Lock/Unlock/Lock-tight(Note 1)
All Block Unlock Time(Note 1)
Erase Suspend Time(Note 1)
Erase Resume Time(Note 1)
Number of Partial Program Cycles in the page (Including main and
spare area)
Block Erase time (Note 1)
NOTE :
1) These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value.
5.10 AC Characteristics for INT Auto Mode
See Timing Diagram 6.22
Parameter
Command Input to INT Low
Symbol Min
-
SLC
t
RD1
MLC
-
SLC
t
RD2
-
MLC
-
SLC
t
PGM2
MLC
-
t
OTP
-
t
LOCK
-
t
ABU
-
t
ESP
-
t
ERS1
-
SLC
NOP
-
MLC
-
t
BERS1
Symbol Min
t
WB
- 114 -
FLASH MEMORY
Typ Max Unit
25 75
30 100
45 400
50 420
240 770
1000 5000
500 700
500 700
2 3
400 500
0.5 11 ms
- 1 cycles
- 1 cycles
0.5 11 ms
Max Unit
- 200 ns
µs
µs
µs
µs
µs
µs
ns
ns
µs
µs