Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 122

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
6.11 Program Operation Timing
See AC Characteristics Table 5.7 and Table 5.9
t
AVDP
AVD
t
AAVDS
A/DQ0:
AA
A/DQ15
CE
OE
WE
t
CS
V
IL
CLK
t
CER
INT
bit
Hi-Z
RDY
NOTE :
1) AA = Address of address register
CA = Address of command register
PCD = Program Command
PMA = Address of memory to be programmed
BA = Address of BufferRAM to write the data
BD = Program Data
SA = Address of status register
2) "In progress" and "complete" refer to status register
3) Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
Program Command Sequence (last two cycles)
t
WEA
t
AAVDH
BA CA
PMA BD
t
DS
t
WPL
t
WPH
t
WC
SA
PCD
t
DH
t
CER
t
CH
t
PGM1 or tPGM2
t
CEZ
- 122 -
FLASH MEMORY
Read Status Data
In
SA
Completed
Progress
t
CEZ