Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 40

4gb flex-muxonenand m-die flash memory
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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
2.8.9 Start Address1 Register F100h (R/W)
This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased.
F100h, default = 0000h
15
14
13
12
DFS
Reserved(00000)
Device
4Gb
8Gb DDP
NOTE :
For QDP, See Section 7.4
Start Address1 Information
Register Information
FBA
DFS
2.8.10 Start Address2 Register F101h (R/W)
This Read/Write register describes the method to select the BufferRAM of DDP (Device BufferRAM Select)
F101h, default = 0000h
15
14
13
12
DBS
Start Address2 Information
Register Information
DBS
>DBS should be set to 1 when accessing the BufferRAM of the second chip(MSB chip) in a DDP.
>Since DDP chip has 2 BufferRAMs multiplexed, the BufferRAM which corresponds to the Flash core that is intended to be
accessed must be selected using DBS.
>Data in BufferRAM of one chip is not accessible to the Flash Core of the other chip in a DDP See Section 7.4.
2.8.11~15 Start Address3~7 Register F102h~F106h
This Register is reserved for future use.
11
10
9
8
Number of Block
1024
2048
Flash Core of DDP (Device Flash Core Select)
11
10
9
8
Reserved(000000000000000)
BufferRAM and Register of DDP (Device BufferRAM Select)
- 40 -
7
6
5
4
FBA
Description
NAND Flash Block Address
7
6
5
4
Description
FLASH MEMORY
3
2
1
0
FBA
FBA[9:0]
DFS[15] & FBA[9:0]
3
2
1
0

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