Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 110

4gb flex-muxonenand m-die flash memory
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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
5.0 AC CHARACTERISTICS
5.1 AC Test Conditions
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
V
CC
V
/2
CC
0V
Input Pulse and Test Point
5.2 Device Capacitance
CAPACITANCE
= 25 °C, V
(T
A
Item
Input Capacitance
Control Pin Capacitance
Output Capacitance
INT Capacitance
NOTE :
1) Capacitance is periodically sampled and not 100% tested.
5.3 Valid Block Characteristics
Parameter
Valid Block Number
NOTE :
device
1) The
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with
both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain five or more bad bits which cause status failure during Program and
.
Erase operation
Do not erase or program factory-marked bad blocks.
2) The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 4bit/528Byte ECC.
Parameter
CLK
other inputs
Input & Output
V
/2
CC
Test Point
= 1.8V, f = 1.0MHz)
CC
Symbol
Test Condition
C
V
=0V
IN1
IN
V
C
=0V
IN2
IN
C
V
=0V
OUT
OUT
C
V
=0V
INT
OUT
Symbol
Single
DDP
N
VB
QDP
Value (66MHz)
0V to V
CC
3ns
5ns
V
/2
CC
C
= 30pF
L
Device
Under
Test
* C
Output Load
Single
DDP
Min
Max
Min
-
10
-
-
10
-
-
10
-
-
10
-
Min
Typ.
998
-
1996
-
3993
-
- 110 -
FLASH MEMORY
Value (83MHz)
0V to V
CC
2ns
2ns
V
/2
CC
C
= 30pF
L
= 30pF including scope
L
and Jig capacitance
QDP
Unit
Max
Min
Max
20
-
40
20
-
40
pF
20
-
40
20
-
40
Max
Unit
1024
2048
Blocks
4096

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