Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 135

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
7.1.3 Determining Rp Value (DDP, QDP Only)
For general operation, INT operates as normal output pin, so that tF is equivalent to tR (below 10ns). But since INT operates as open drain
with 50K ohm for Reset (Cold/Hot/Warm/NAND Flash Core) operations and 'Cache program operation' case at DDP option, the pull-up resis-
tor value is related to tr(INT). And appropriate value can be obtained with the following reference charts.
Vcc or Vccq
~50k ohm
Ibusy
tr[us]
tf[ns]
INT pol = 'High' (Default)
Rp
Ready Vcc
INT
KFN8GH6Q4M @ Vcc = 1.8V, Ta = 25°C , C
1.76
0.18
0.09
1.126
2.192
0.146
5.98 5.74 5.73
10K 20K
1K
VOL
Vss
Busy State
tf
= 30pF
L
3.952
3.485
2.912
0.06
0.045
0.036
5.72 5.72 5.72
30K
50K
40K
Rp(ohm)
- 135 -
FLASH MEMORY
VOH
tr
5.416
0.000
Open(100K)