Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 106

Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
Invalid Block Table Creation Flow Chart
Increment Block Address
Create (or update)
Invalid Block(s) Table
3.16.2 Invalid Block Replacement Operation
Within its life time, additional invalid blocks may develop with NAND Flash Array memory. Refer to the device's qualification report for the
actual data.
The following possible failure modes should be considered to implement a highly reliable system.
In the case of a status read failure after erase or program, a block replacement should be done. Program status failure
during a page program does not affect the data of the other pages in the same block within a SLC partition, while Progrm status failure could
contaminate the data of the paired page within a MLC partition. So, users must make sure how software handle the program failure occurrs.
Block Failure Modes and Countermeasures
Failure Mode
Erase Failure
Program Failure
Four Bit Failure in Load Operation
Start
Set Block Address = 0
Check "FFFFh" at the 1st word of sector 0
*
of spare area in the first page in the block
either SLC partition or MLC partition
No
Check
"FFFFh" ?
Yes
No
Last Block ?
Yes
End
Detection and Countermeasure sequence
Status Read after Erase --> Block Replacement
Status Read after Program --> Block Replacement
Error Correction by ECC mode of the device
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FLASH MEMORY