Samsung FLEX-MUXONENAND KFKAGH6Q4M Specifications page 69

4gb flex-muxonenand m-die flash memory
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Flex-MuxOneNAND4G(KFM4GH6Q4M-DEBx)
Flex-MuxOneNAND8G(KFN8GH6Q4M-DEBx)
Flex-MuxOneNAND16G(KFKAGH6Q4M-DEBx)
3.7.2.1 Continuous Linear Burst Read Operation
See Timing Diagram 6.2
First Clock Cycle
The initial word is output at tIAA after the rising edge of the first CLK cycle. The RDY output indicates the initial word is ready to the system by
pulsing high. If the device is accessed synchronously while it is set to Asynchronous Read Mode, the first data can still be read out.
Subsequent Clock Cycles
Subsequent words are output (Burst Access Time from Valid Clock to Output) tBA after the rising edge of each successive clock cycle, which
automatically increments the internal address counter.
Terminating Burst Read
The device will continue to output sequential burst data until the system asserts CE high, or RP low, wrapping around until it reaches the des-
ignated address (see section 2.7.3 for address map information). Alternately, a Cold/Warm/Hot Reset, or a WE low pulse will terminate the
burst read operation.
Synchronous Read Boundary
Division
BootRAM Main(0.5KW)
BufferRAM0 Main(1KW)
BufferRAM1 Main(1KW)
Reserved
Main*
BootRAM Spare(16W)
BufferRAM0 Spare(32W)
BufferRAM1 Spare(32W)
Reserved
Spare*
Reserved
Register*
Register(4KW)
NOTE :
Continuous burst read should be done, with in the address range of the selected buffer RAM, dataRAM0 or DataRAM1.
3.7.2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation
See Timing Diagram 6.1
An alternate Burst Read Mode enables a fixed number of words to be read from consecutive address.
The device supports a burst read from consecutive addresses of 4-, 8-, 16-, and 32-words with a linear-wrap around. When the last word in
the burst has been reached, assert CE and OE high to terminate the operation.
In this mode, the start address for the burst read can be any address of the address map with one exception. The device does not support a
32-word linear burst read on the spare area of the BufferRAM.
Add.map(word order)
* Reserved area is not available on Synchronous read
0000h~01FFh
0200h~05FFh
0600h~09FFh
0A00h~7FFFh
8000H~800Fh
8010h~802Fh
8030h~804Fh
8050h~8FFFh
9000h~EFFFh
F000h~FFFFh
- 69 -
FLASH MEMORY
Not Supported
Not Supported
Not Supported
Not Supported
Not Supported

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