Quectel LTE-A Series Hardware Design page 25

USB Interface
Pin Name Pin No.
USB_VBUS 32
USB_DM 33
USB_DP 34
USB_SS_ TX_M 37
USB_SS_ TX_P 38
USB_SS_ RX_P 40
USB_SS_ RX_M 41
USB_ID 36
OTG_PWR_EN 143
SDIO Interface*
Pin Name Pin No.
SD_VDD 46
SD_DATA0 49
SD_DATA1 50
EG18_Hardware_Design
I/O Description
USB connection
DI
detection
USB 2.0 differential
IO
data bus (-)
USB 2.0 differential
IO
data bus (+)
USB 3.0 super speed
AO
transmission (-)
USB 3.0 super speed
AO
transmission (+)
USB 3.0 super speed
AI
receiving (+)
USB 3.0 super speed
AI
receiving (-)
DI OTG identification
DO OTG power control
I/O Description
SD card application:
SDIO pull up power
source
PO
eMMC application:
Keep it open when
used for eMMC
SDIO data signal (bit
IO
0)
IO SDIO data signal (bit
LTE-A Module Series
EG18 Hardware Design
For 3.0V (U)SIM:
V max=0.4V
OL
V min=2.3V
OH
DC Characteristics
Vmax=5.25V
Vmin=3.3V
Vnorm=5.0V
V min=-0.3V
IL
V max=0.6V
IL
V min=1.2V
IH
V max=2.0V
IH
V max=0.45V
OL
V min=1.35V
OH
DC Characteristics
For 1.8V SD card:
Vmax=1.9V
Vmin=1.75V
For 3.0V SD card:
Vmax=3.05V
Vmin=2.75V
I max=50mA
O
For 1.8V SD card:
V max=0.45V
OL
V min=1.4V
OH
Comment
Comply with USB
2.0 standard
specifications.
Require differential
impedance of 90Ω.
Comply with USB
3.0 standard
specifications.
Require differential
impedance of 90Ω.
1.8V power domain.
If unused, keep it
open.
Comment
Either 1.8V or 3.0V
is supported by the
module
automatically.
Power of SD card
must be provided by
an external power
supply.
If unused, keep it
open.
If unused, keep it
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