Internal Clock Source Characteristics; Table 30. Table; Table 32. Lsi Oscillator Characteristics; Table 58. Table - STMicroelectronics STM32L151CCT6 Manual

Ultra-low-power 32-bit mcu arm-based cortex-m3, 256kb flash, 32kb sram, 8kb eeprom, lcd, usb, adc, dac
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Electrical characteristics
6.3.7

Internal clock source characteristics

The parameters given in
summarized in
High-speed internal (HSI) RC oscillator
Symbol
f
HSI
(1)(2)
TRIM
(2)
ACC
HSI
(2)
t
SU(HSI)
(2)
I
DD(HSI)
1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are
multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).
2. Guaranteed by characterization results, not tested in production.
3. Guaranteed by test in production.
Low-speed internal (LSI) RC oscillator
Symbol
(1)
f
LSI
(2)
D
LSI
(3)
t
su(LSI)
(3)
I
DD(LSI)
1. Guaranteed by test in production.
2. This is a deviation for an individual part, once the initial frequency has been measured.
3. Guaranteed by design, not tested in production.
78/135
Table 31
Table
14.
Table 31. HSI oscillator characteristics
Parameter
Frequency
V
DD
Trimming code is not a multiple of 16
HSI user-trimmed
resolution
Trimming code is a multiple of 16
V
DDA
V
DDA
V
Accuracy of the
DDA
factory-calibrated
V
DDA
HSI oscillator
V
DDA
V
DDA
T
A
HSI oscillator
startup time
HSI oscillator
power consumption

Table 32. LSI oscillator characteristics

Parameter
LSI frequency
LSI oscillator frequency drift
0°C ≤ T
≤ 105°C
A
LSI oscillator startup time
LSI oscillator power consumption
DocID022799 Rev 10
are derived from tests performed under the conditions
Conditions
= 3.0 V
= 3.0 V, T
= 25 °C
A
= 3.0 V, T
= 0 to 55 °C
A
= 3.0 V, T
= -10 to 70 °C
A
= 3.0 V, T
= -10 to 85 °C
A
= 3.0 V, T
= -10 to 105 °C
A
= 1.65 V to 3.6 V
= -40 to 105 °C
-
-
Min
26
-10
-
-
STM32L151xC STM32L152xC
Min
Typ
Max
-
16
-
± 0.4
-
0.7
± 1.5
-
-
(3)
(3)
-1
-
1
-1.5
-
1.5
-2
-
2
-2.5
-
2
-4
-
2
-4
-
3
-
3.7
6
-
100
140
Typ
Max
38
56
-
4
-
200
400
510
Unit
MHz
%
%
%
%
%
%
%
%
µs
µA
Unit
kHz
%
µs
nA

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