Table 14: Component For Da16200 Qfn, 1.8 V Flash Mode; Table 15: Io Power Domain - Renesas DA16200 H/W User Manual

UM-WI-006
DA16200 H/W Design Guide

Table 14: Component for DA16200 QFN, 1.8 V Flash Mode

Quantity Part Reference
1 R1
2 C2, C3
C1, C4, C5, C7,
5
C9
1 C6
1 R2
1 L1
1 C8
2 C10, C11
1 R3
1 C12
2 R4, R5
1 C13
1 C15
1 L3
1 C17
2 C18, C19
1 L2
Note 1 Use any 5 % tolerance.

Table 15: IO Power Domain

VDD_DIO1
VDD_DIO2
VDD_FDIO
User Manual
CFR0012
Value Description
30 kΩ (1 %)
These values may be changed by crystal component
characteristics and board condition.
1.2 pF
Part: FCX-07L
1 µF
470 nF
10 kΩ
4.7 µH LQM21PN4R7MGH (Murata)
10 µF
These values may be changed by crystal component
characteristics and board condition.
15 pF
Part: TFX-03
Remove when external MCU control 'RTC_PWR_KEY'.
This value should be chosen by customer application to
470 kΩ
achieve the enough delay time depending on the power-on
time of VBAT.
For detailed information, see [1](section 6.1).
Remove when external MCU control 'RTC_PWR_KEY'.
This value should be chosen by customer application to
achieve the enough delay time depending on the power-on
1 uF
time of VBAT. Not exceed 1uF.
For detailed information, refer to the datasheet (section
6.1).
4.7 kΩ
4.7 µF
DNI Optional
2.2 nH
0.5 pF Optional
1 pF Optional
1.8 nH Optional
IO Power Domain
GPIOC[8:6], TMS, TCLK, UART_TXD, UART_RXD
Revision 1.5
31 of 44
GPIOA[11:0]
F_IO[3:0], F_CSN, F_CLK
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NDA Confidential
11-Apr-2022