p o w e r e l e c T r o n i c S a n d c a b i n e T f e aT U r e S
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19
AFE compartment
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20
Phase module
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19
Phase module
The AFE consists of three identical phase modules,
each housing the HV IGBT (Insulated Gate Bipolar
Transistor) semiconductors, phase capacitors, gate
drivers and the interface board for communication
with the circuit board of the AFE (AMC circuit
board).
3
6
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20
4
3
2
1
frame 1
1
2
3
4
5
6
6
1
2
3
5
The high voltage IGBT is a power semiconductor
switching device specially developed for medium
voltage drives. The device combines high speed
switching capabilities with high blocking voltage
and low conduction losses. The phase modules can
be removed from the cabinet for maintenance
and service.
4
3
3
2
1
frame 2
1
2
3
4
5
6
L1 phase module of AFE
L2 phase module of AFE
L3 phase module of AFE
Extracted phase module
AFE compartment
Air plenum
4
1
2
3
4
frame 3
5
Phase capacitor
Phase INT board
Gate drivers
Medium voltage connectors
IGBT module
IGBT assembly on heat sink
25
3