Memory Characteristics; Lvr Electrical Characteristics; Power-On Reset Characteristics - Holtek BS83B24C Manual

BS83B24C/BS83C40C
Touch Flash MCU

Memory Characteristics

Symbol Parameter
V V fo� Read / W�ite
RW DD
Flash Program Memory / Data EEPROM Memory
E�ase / W�ite C�cle Time – �lash
P�og�am Memo��
t
DEW
W�ite C�cle Time – Data EEPROM
Memo��
I P�og�amming / E�ase C���ent on V
DDPGM
E Cell End��ance
P
t ROM Data Retention Time
RETD
RAM Data Memory
V RAM Data Retention Voltage
DR

LVR Electrical Characteristics

Symbol Parameter
V Low Voltage Reset Voltage
LVR
I Ope�ating C���ent
LVRBG
t Minim�m Low Voltage Width to Reset
LVR
I Additional C���ent fo� LVR Ena�le
LVR

Power-on Reset Characteristics

Symbol Parameter
V V Sta�t Voltage to Ens��e Powe�-on Reset
POR DD
RR V Rising Rate to Ens��e Powe�-on Reset
POR DD
Minim�m Time fo� V
DD
t
POR
Powe�-on Reset
Rev. 1.00
Test Conditions
V
DD
—
—
—
—
DD
—
— Ta=�5°C
— Device in SLEEP Mode
Test Conditions
V
DD
— LVR ena�le� voltage select �.10V
— LVR ena�le� voltage select �.55V
— LVR ena�le� voltage select 3.15V
— LVR ena�le� voltage select 3.�0V
3V
LVR ena�le� VBGEN=0
5V
3V
LVR ena�le� VBGEN=1
5V
—
— VBGEN=0
V
DD
—
—
Sta�s at V to Ens��e
POR
—
V
DD
t
POR
�3
Min.
Conditions
— V
DDmin
— —
— —
— —
— 100K
—
1.0
Ta=-40°C~�5°C� �nless othe�wise specif�
Min.
Conditions
- 5%
—
—
—
—
— 1�0
—
Test Conditions
Min.
Conditions
— —
— 0.035
— 1
RR
POR
V
POR
Time
Ta=-40°C~�5°C
Typ. Max. Unit
— V V
DDmax
� 3
ms
4 6
— 5.0 mA
— — E/W
40 — Yea�
— — V
Typ. Max. Unit
�.10
�.55
+ 5% V
3.15
3.�0
— 1�
�0 �5
μA
— 150
1�0 �00
�40 4�0 μs
— �4 μA
Ta=�5°C
Typ. Max. Unit
— 100 mV
— — V/ms
— — ms
�e���a�� 0�� �01�