Honeywell RM640 Handbook page 135

RM640
FOUNDATION™ fieldbus FOUNDATION fieldbus (pending)
FOUNDATION FOUNDATION fieldbus fieldbus
Physical layer
Communication standard
ITK version
Function blocks
Device power supply
Basic current
Maximum error current FDE
Polarity sensitivity
Minimum cycle time
Output data
Input data
Link Active Scheduler
NAMUR NE 107 data
Approvals and certification
CE
Vibration resistance
Explosion protection Explosion protection Explosion protection Explosion protection
ATEX (EU Type Approval)
- pending
ATEX (Type Approval)
- pending
IECEx
- pending
34-VF-25-131 iss.1 GLO Feb 2019 US
FOUNDATION™ fieldbus protocol that agrees with IEC 61158-2 and FISCO model;
galvanically isolated
H1
6.3
1 × Enhanced Resource Block (RB), 1 × Customer Level Transducer Block
(LEVELTB), 1 × Customer Converter Transducer Block (CONVTB), 1 × Customer
Diagnosis Transducer Block (DIAGTB), 4 × Analog Input Block (AI), 1 × Digital Input
(DI), 1 × Integrator Block (IT), 1 × Proportional Integral Derivate Block (PID), 1 ×
Arithmetic Block (AR)
Analog Input Block: 10 ms
Digital Input Block: 20 ms
Integrator Block: 15 ms
Proportional Integral Derivate Block: 25 ms
Not intrinsically safe: 9...32 V DC
Intrinsically safe: 9...24 V DC
18 mA
25.5 mA (= basic current + error current = 18 mA + 7.5 mA)
No
250 ms
Level, distance, volume, ullage volume, mass, ullage mass
None
Supported
Supported with FF field diagnosis (FF-891)
The device meets the essential requirements of the EU Directives. The
manufacturer certifies successful testing of the product by applying the CE
marking.
For more data about the EU Directives and European Standards related to this
device, refer to the EU Declaration of Conformity. You can download this document
free of charge from the website.
EN 60068-2-6 and EN 60721-3-4 (1...9 Hz: 3 mm / 10...200 Hz:1g, 10g shock ½
sinus: 11 ms)
II 1/2 G Ex ia IIC T6...T* Ga/Gb;
II 1/2 D Ex ia IIIC T85°C...T*°C Da/Db;
II 1/2 G Ex db ia IIC T6...T* Ga/Gb;
II 1/2 D Ex ia tb IIIC T85°C...T*°C Da/Db
II 3 G Ex ic IIC T6...T* Gc;
II 3 D Ex ic IIIC T85°C...T*°C Dc
Ex ia IIC T6...T* Ga/Gb;
3
Ex ia IIIC T85°C...T*°C Da/Db;
Ex db ia IIC T6...T* Ga/Gb;
Ex ia tb IIIC T85°C...T*°C Da/Db;
Ex ic IIC T6...T* Gc;
3
Ex ic IIIC T85°C...T*°C Gc
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