Dual-Core Intel® Xeon® Processor 5200 Series Electrical Specifications
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
Measured at 0.2*V
3.
V
is determined by value of the external pullup resistor to V
OH
4.
For V
IN
2.13.2
V
Overshoot Specification
CC
The Dual-Core Intel® Xeon® Processor 5200 Series can tolerate short transient
overshoot events where V
to-low current load condition. This overshoot cannot exceed VID + V
the maximum allowable overshoot above VID). These specifications apply to the
processor die voltage as measured across the VCC_DIE_SENSE and VSS_DIE_SENSE
lands and across the VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands.
Table 2-17. V
Overshoot Specifications
CC
Symbol
V
OS_MAX
T
OS_MAX
Figure 2-8.
V
Overshoot Example Waveform
CC
VID + 0.050
VID - 0.000
Notes:
1.
VOS is the measured overshoot voltage.
2.
TOS is the measured time duration above VID.
2.13.3
Die Voltage Validation
Core voltage (VCC) overshoot events at the processor must meet the specifications in
Table 2-17
and across the VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands. Overshoot events that
are < 10 ns in duration may be ignored. These measurements of processor die level
overshoot should be taken with a 100 MHz bandwidth limited oscilloscope.
.
TT
between 0 V and V
.
OH
exceeds the VID voltage when transitioning from a high-
CC
Parameter
Magnitude of V
overshoot above VID
CC
Time duration of V
overshoot above VID
CC
Example Overshoot Waveform
0
5
T
V
when measured across the VCC_DIE_SENSE and VSS_DIE_SENSE lands
. Refer to platform design guide for details.
TT
Min
Max
T
OS
10
15
Time [us]
: Overshoot time above VID
OS
: Overshoot above VID
OS
(V
OS_MAX
OS_MAX
Units
Figure
50
mV
2-8
25
µs
2-8
V
OS
20
is
Notes
25
35