Vcc Overshoot Specification; Cmos Signal Input/Output Group And Tap Signal Group Dc Specifications; Open Drain Output Signal Group Dc Specifications - Intel E5310 - Xeon 1.6 GHz 8M L2 Cache 1066MHz FSB LGA771 Active Quad-Core Processor Datasheet

Electrical Specifications
Table 2-15. CMOS Signal Input/Output Group and TAP Signal Group DC Specifications
Symbol
V
IL
V
IH
V
OL
V
OH
I
OL
I
OH
I
LI
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. The V
TT
3. Refer to the processor I/O Buffer Models for I/V characteristics.
4. Measured at 0.1*V
5. Measured at 0.9*V
6. For Vin between 0 V and V
7. This is the measurement at the pin.
Table 2-16. Open Drain Output Signal Group DC Specifications
Symbol
V
OL
V
OH
I
OL
I
LO
Notes:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. Measured at 0.2*V
3. V is determined by value of the external pullup resistor to V
OH
details.
4. For V
IN
5. This is the measurement at the pin.
2.13.2 V Overshoot Specification
CC
Processors can tolerate short transient overshoot events where V
voltage when transitioning from a high-to-low current load condition. This overshoot
cannot exceed VID + V
VID). These specifications apply to the processor die voltage as measured across the
VCC_DIE_SENSE and VSS_DIE_SENSE lands and across the VCC_DIE_SENSE2 and
VSS_DIE_SENSE2 lands.
Table 2-17. V Overshoot Specifications
CC
Symbol
V
OS_MAX
T
OS_MAX
Quad-Core Intel® Xeon® Processor 5300 Series Datasheet
Parameter
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Current
Output High Current
Input Leakage Current
referred to in these specifications refers to instantaneous V
.
TT
.
TT
. Measured when the driver is tristated.
TT
Parameter
Output Low Voltage
Output High Voltage 0.95 * V
Output Low Current
Leakage Current
.
TT
between 0 V and V .
OH
(V
OS_MAX OS_MAX
Parameter
Magnitude of V overshoot above VID
CC
Time duration of V overshoot above VID
CC
Min Typ
-0.10 0.00
0.7*V V
TT TT
-0.10 0
0.9*V V
TT TT
1.70 N/A
1.70 N/A
N/A N/A
TT
Min Typ
N/A
V 1.05 * V
TT TT
16 N/A
N/A N/A
. Please refer to platform design guide for
TT
is the maximum allowable overshoot above
Min Max
Max Units Notes
0.3*V V
TT
V +0.1 V
TT
0.1*V V
TT
V +0.1 V
TT
4.70 mA
4.70 mA
+/- 200
μA
.
Max Units Notes
0.20 V
V
TT
50 mA
+/- 400
μA
exceeds the VID
CC
Units Figure
50 mV 2-6
25 µs 2-6
1
2,3
2
2
2
4
5
6,7
1
3
2
4,5
Notes
33