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Electrical Specifications
Table 2-16. CMOS Signal Group and TAP Signal Group DC Specifications
Symbol
V
OH
I
OL
I
OH
I
LI
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
The V
TT
3.
Refer to the processor I/O Buffer Models for I/V characteristics.
4.
Measured at 0.1*V
5.
Measured at 0.9*V
6.
For Vin between 0 V and V
Table 2-17. Open Drain Signal Group DC Specifications
Symbol
V
OL
V
OH
I
OL
I
LO
Notes:
1.
Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2.
Measured at 0.2*V
3.
V
is determined by value of the external pullup resistor to V
OH
4.
For V
IN
2.13.1
V
Overshoot Specification
CC
The Dual-Core Intel
overshoot events where V
to-low current load condition. This overshoot cannot exceed VID + V
the maximum allowable overshoot above VID). These specifications apply to the
processor die voltage as measured across the VCC_DIE_SENSE and VSS_DIE_SENSE
lands and across the VCC_DIE_SENSE2 and VSS_DIE_SENSE2 lands.
Table 2-18. V
Overshoot Specifications
CC
Symbol
V
OS_MAX
T
OS_MAX
®
®
Dual-Core Intel
Xeon
Processor 5100 Series Datasheet
Parameter
Output High Voltage
Output Low Current
Output High Current
Input Leakage Current
referred to in these specifications refers to instantaneous V
.
TT
.
TT
. Measured when the driver is tristated.
TT
Parameter
Output Low Voltage
Output High Voltage
0.95 * V
Output Low Current
Leakage Current
.
TT
between 0 V and V
.
OH
®
®
Xeon
Processor 5100 Series can tolerate short transient
exceeds the VID voltage when transitioning from a high-
CC
Parameter
Magnitude of V
overshoot above VID
CC
Time duration of V
overshoot above VID
CC
Min
Typ
0.9*V
V
TT
TT
1.70
N/A
1.70
N/A
N/A
N/A
TT
Min
Typ
0
N/A
V
1.05 * V
TT
TT
16
N/A
N/A
N/A
. Refer to platform design guide for details.
TT
Min
Max
Max
Units
Notes
V
+0.1
V
TT
4.70
mA
4.70
mA
± 100
μA
.
Max
Units
Notes
0.20
V
V
TT
50
mA
± 200
μA
(V
OS_MAX
OS_MAX
Units
Figure
50
mV
2-7
25
µs
2-7
1
2
4
5
6
1
3
2
4
is
Notes
35
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