Charge Pumping - Agilent Technologies B1500A Training Manual

Charge Pumping

Source
n+
Charge pumping is a type of hot carrier measurement. It provides direct measurement of interface
states and an indication of electron and hole trapping.
The gate of the MOS transistor is connected to a pulse generator. The current (Icp) is caused by the
repetitive recombination of minority carriers with majority carriers at the silicon-silicon oxide
interface.
Gate
Drain
Oxide
n+
p
Substrate
SMU
A
Icp
SMU
13-17
SPGU Control and Applications
or
A
PGU
Module 13