Agilent Technologies B1500A Training Manual page 109

Flash Memory – Endurance Test
NAND Cell Test
• Burst write/erase reduces
test time dramatically
In an example, the test time was less
than 2 hours for 1 million cycle test.
It will be about 1/70 compared with
4155/4156 solution.
NOR Cell Test
• Drain open can be made by
opening the analog switch in
the HVSPGU.
For 1 million cycle test, 2PG solution
improves the test time about 1/4
compared with 4155/4156 solution.
3PG solution improves it about 1/4
compared with 2PG solution.
Note:
SPGU output
40V
-40V
3-level pulse by each channel
Gate
SPGU
Drain
Source
Sub
Pulse switch for drain open
13-25
SPGU Control and Applications
Write pulse
Gate
Drain
Source
Sub
Erase pulse
Write pulses
Open
12V
7V
12V
Erase pulse
Module 13