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ESMT
Note :
1. All input expect CKE & DQM can be don't care when CS is high at the CLK high going edge.
2. Bank active @ read/write are controlled by BA0, BA1.
BA0
BA1
0
0
0
1
1
0
1
1
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
A10/AP
0
1
4. A10/AP and BA0, BA1 control bank precharge when precharge is asserted.
A10/AP
0
0
0
0
1
Elite Semiconductor Memory Technology Inc.
Active & Read/Write
Bank A
Bank B
Bank C
Bank D
BA0
BA1
0
0
Disable auto precharge, leave A bank active at end of burst.
0
1
Disable auto precharge, leave B bank active at end of burst.
1
0
Disable auto precharge, leave C bank active at end of burst.
1
1
Disable auto precharge, leave D bank active at end of burst.
0
0
Enable auto precharge , precharge bank A at end of burst.
0
1
Enable auto precharge , precharge bank B at end of burst.
1
0
Enable auto precharge , precharge bank C at end of burst.
1
1
Enable auto precharge , precharge bank D at end of burst.
BA0
BA1
Precharge
0
0
Bank A
0
1
Bank B
1
0
Bank C
1
1
Bank D
X
X
All Banks
Operating
Publication Date: May 2008
Revision: 3.3
M12L64164A
30/46
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