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S3F80P5_UM_ REV1.00
Minimun Instruction
1.5MHz
500 kHz
250 kHz
Table 16-10. AC Electrical Characteristics for Internal Flash ROM
= -25 °C to + 85 °C)
(T
A
Parameter
Flash Erase/Write/Read Voltage
(note1)
Programming Time
(note2)
Sector Erasing Time
(note3)
Chip Erasing Time
Data Access Time
Number of Writing/Erasing
Data Retention
NOTES:
1. The programming time is the time during which one byte (8-bit) is programmed.
2. The Sector erasing time is the time during which all 128-bytes of one sector block is erased.
3. In the case of S3F80P5, the chip erasing is available in Tool Program Mode only.
Clock
A
2 MHz
1MHz
1kHz
1
2
Supply Voltage (V)
Minimun Instruction Clock = 1/4n x oscillator frequency (n = 1, 2, 8, or 16)
A: 1.65 V, 8 MHz
Figure 16-4. Operating Voltage Range of S3F80P5
Symbol
Fewrv
Ftp
Ftp1
Ftp2
Ft
RS
FNwe
Ftdr
3
4
5
6
Conditions
Min
V
1.60
DD
−
20
4
32
V
= 2.0 V
–
DD
−
10,000
−
10
ELECTRICAL DATA
f
OSC
(Main Oscillator Frequency)
8 MHz
6 MHz
4 MHz
2 MHz
1 MHz
400 kHz
7
Typ
Max
3.3
3.6
−
30
−
12
−
70
−
250
−
−
−
−
Unit
V
μS
mS
mS
nS
Times
Years
16-11
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