Samsung S3F80P5X User Manual page 287

S3F80P5_UM_ REV1.00
Case3. Programming to the flash memory space located in other sectors
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WR_INSECTOR2:
LD R0,#40H
LD R1,#40H
SB1
LD FMUSR,#0A5H
LD FMCON,#01010000B
LD FMSECH,#01H
LD FMSECL,#00H
LD R9,#0CCH
LD R10,#01H
LD R11,#40H
CALL WR_BYTE
LD R0,#40H
WR_INSECTOR50:
LD FMSECH,#19H
LD FMSECL,#00H
LD R9,# 55H
LD R10,#19H
LD R11,#40H
CALL WR_BYTE
WR_INSECTOR128:
LD FMSECH,#40H
LD FMSECL,#00H
LD R9,#0A3H
LD R10,#40H
LD R11,#40H
WR_BYTE1:
LDC @RR10,R9
INC R11
DJNZ R1,WR_BYTE1
LD FMUSR,#00H
SB0
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WR_BYTE:
LDC @RR10,R9
INC R11
DJNZ R0,WR_BYTE
RET
; User program mode enable
; Selection programming mode and Start programming
; Set the base address of sector located in target address to write data
; The sector 2's base address is 100H
; Load data "CCH" to write
; Load flash memory upper address into upper register of pair working
; register
; Load flash memory lower address into lower register of pair working
; register
; Set the base address of sector located in target address to write data
; The sector 50's base address is 1900H
; Load data "55H" to write
; Load flash memory upper address into upper register of pair working
; register
; Load flash memory lower address into lower register of pair working
; register
; Set the base address of sector located in target address to write data
; The sector 128's base address is 4000H
; Load data "A3H" to write
; Load flash memory upper address into upper register of pair working
; register
; Load flash memory lower address into lower register of pair working
; register
; Write data 'A3H' at flash memory location
; User Program mode disable
; Write data written by R9 at flash memory location
EMBEDDED FLASH MEMORY INTERFACE
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