Supermicro C9X299-PGF-L User Manual page 77

Chapter 4: UEFI BIOS
Memory Voltage (mV)
Enter a value for Memory Voltage. To select 1.200 volts, enter 1200. The default is 1200.
1st memory timing:
tCL
This feature configures the Cas Latency Range. Enter a number between 4-18. The default
is 15.
tRCD
This feature selects the Row to Col Delay Range. Enter a number between 1-38. The
default is 15.
tRP
This feature selects the Ras Precharge Range. Enter a number 1-38. The default is 15.
tRAS
This feature selects the Ras Active Time. Enter a number between 1-586. The default is 36.
Command Timing
This feature controls the desired memory controller command timing. The options are 1N,
2N, and 3N.
2nd memory timing:
tWR
This feature configures the Minimum Write Recovery Time. Enter a number between 1-38.
The default is 16.
tRFC
This feature selects the Minimum Refresh Recovery Delay Time. Enter a number between
1-9363. The default is 278.
tRRD
This feature selects the Minimum Row Active to Row Active Delay Time. Enter a number
between 1-38. The default is 4.
tRRD_L
Enter a value for desired tRRD_L. The default is 6.
tWTR
This feature configures the Minimum Internal Write to Read Command Delay Time. Enter
a number between 1-38. The default is 3.
tRTP
This feature configures the Internal Read to Precharge Command Delay Time. Enter a
number between 1-38. The default is 8.
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