Environmental Requirements - Intel Xeon E5-2400 Thermal/Mechanical Design Manual

LGA1356 Socket, ILM and Back Plate Electrical, Mechanical, and Environmental Specifications
Table 4-4. Electrical Requirements for LGA1356 Socket
Mated loop inductance, Loop
Maximum mutual capacitance, C.
Socket Average Contact Resistance
(EOL)
Max Individual Contact Resistance
(EOL)
Bulk Resistance Increase
Dielectric Withstand Voltage
Insulation Resistance
4.6

Environmental Requirements

The reliability targets in this chapter are based on the expected field use environment
for these products. The test sequence for the LGA1356 socket was developed using the
knowledge-based reliability evaluation methodology, which is acceleration factor
dependent. A simplified process flow of this methodology can be seen in
Since the LGA1356 socket is very similar to the LGA1366 socket, the LGA1356 socket is
expected to perform similarly and full validation for the LGA1356 socket is avoided.
Intel® Xeon® Processor E5-2400 Product Family
Thermal/Mechanical Design Guide
Parameter
360 Volts RMS
Value
The inductance calculated for two contacts,
considering one forward conductor and one return
<3.9 nH
conductor. These values must be satisfied at the
worst-case height of the socket.
<1 pF The capacitance between two contacts
The socket average contact resistance target is
derived from average of every chain contact
resistance for each part used in testing, with a
chain contact resistance defined as the resistance
of each chain minus resistance of shorting bars
divided by number of lands in the daisy chain.
15.2 mΩ
The specification listed is at room temperature
and has to be satisfied at all time.
Socket Contact Resistance: The resistance of
the socket contact, solderball, and interface
resistance to the interposer land.
The specification listed is at room temperature
and has to be satisfied at all time.
≤ 100 mΩ
Socket Contact Resistance: The resistance of
the socket contact, solderball, and interface
resistance to the interposer land; gaps included.
The bulk resistance increase per contact from
≤ 3 mΩ
24 °C to 107 °C
800 MΩ
Comment
Figure 4-1.
31