Table 34. Flash Memory And Data Eeprom Characteristics; Table 35. Flash Memory And Data Eeprom Endurance And Retention - STMicroelectronics STM32L100RC Manual

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STM32L100RC
Flash memory and data EEPROM
Symbol
V
DD
t
prog
I
DD
1. Guaranteed by design, not tested in production.
Symbol
(2)
N
CYC
(2)
t
RET
1. Guaranteed by characterization results, not tested in production.
2. Characterization is done according to JEDEC JESD22-A117.
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Table 34. Flash memory and data EEPROM characteristics

Parameter
Operating voltage
Read / Write / Erase
Programming/ erasing
time for byte / word /
double word / half-page
Average current during
the whole programming /
erase operation
Maximum current (peak)
during the whole
programming / erase
operation

Table 35. Flash memory and data EEPROM endurance and retention

Parameter
Cycling (erase / write)
Program memory
Cycling (erase / write)
EEPROM data memory
Data retention (program memory) after
10 kcycles at T = 85 °C
A
Data retention (EEPROM data memory)
after 300 kcycles at T
A
Data retention (program memory) after
10 kcycles at T = 105 °C
A
Data retention (EEPROM data memory)
after 300 kcycles at T
A
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Conditions
-
Erasing
Programming
= 25 °C, V
T = 3.6 V
A DD
Conditions
= -40°C to
T
A
105 °C
T
RET
= 85 °C
T
RET
= 105 °C
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Min Typ
1.65 -
- 3.28
- 3.28
- 600
- 1.5
Value
(1)
Min Typ Max
10
300
30
= +85 °C
30
10
= +105 °C
10
021-31660491
(1)
Max Unit
3.6 V
3.94
ms
3.94
µA
2.5 mA
Unit
- -
kcycles
- -
- -
- -
years
- -
- -
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