Table of Contents
Advertisement
8.3 DC Characteristics
1) 3.3 V/5.0 V dual power source
(Unless otherwise specified: V
Item
Input leakage current
Off-state leakage current
High-level output voltage
Low-level output voltage
High-level input voltage
Low-level input voltage
Positive trigger input voltage
Negative trigger input voltage
Hysteresis voltage
High-level input voltage
Low-level input voltage
Pull-up resistor
Pull-down resistor
Input pin capacitance
Output pin capacitance
I/O pin capacitance
2) 3.3 V single power source
Item
Static current consumption
Input leakage current
Off-state leakage current
High-level output voltage
Low-level output voltage
High-level input voltage
Low-level input voltage
Positive trigger input voltage
Negative trigger input voltage
Hysteresis voltage
Pull-up resistor
Pull-down resistor
Input pin capacitance
Output pin capacitance
I/O pin capacitance
Note: See Appendix B for pin characteristics.
S1C33L03 PRODUCT PART
=5V±0.5V, V
DDE
Symbol
Condition
I
LI
I
OZ
V
I
=-3mA (Type1), I
OH
OH
OH
V
=Min.
DDE
V
I
=3mA (Type1), I
=12mA (Type3),
OL
OL
OL
V
=Min.
DDE
V
CMOS level, V
=Max.
IH
DDE
V
CMOS level, V
=Min.
IL
DDE
V
CMOS Schmitt
T+
V
CMOS Schmitt
T-
V
CMOS Schmitt
H
V
TTL level, V
=Max.
IH2
DDE
V
TTL level, V
=Min.
IL2
DDE
R
V
=0V
PU
I
R
V
=V
(ICEMD)
PD
I
DDE
C
f=1MHz, V
=0V
I
DDE
C
f=1MHz, V
=0V
O
DDE
C
f=1MHz, V
=0V
IO
DDE
(Unless otherwise specified: V
Symbol
Condition
I
Static state, T
=85°C
DDS
j
I
LI
I
OZ
V
I
=-2mA (Type1), I
OH
OH
OH
I
=-12mA (Type3), V
OH
V
I
=2mA (Type1), I
=6mA (Type2),
OL
OL
OL
I
=12mA (Type3), V
OL
DD
V
CMOS level, V
=Max.
IH
DD
V
CMOS level, V
=Min.
IL
DD
V
LVTTL Schmitt
T+
V
LVTTL Schmitt
T-
V
LVTTL Schmitt
H
R
V
=0V
PU
I
R
V
=V
(ICEMD)
PD
I
DD
C
f=1MHz, V
=0V
I
DD
C
f=1MHz, V
=0V
O
DD
C
f=1MHz, V
=0V
IO
DD
EPSON
8 ELECTRICAL CHARACTERISTICS
=2.7V to 3.6V, V
DD
Min.
-1
-1
V
=-12mA (Type3),
DDE
-0.4
–
3.5
–
2.0
0.8
0.3
2.0
–
60
30
–
–
–
=V
=2.7V to 3.6V, Ta=-40°C to +85°C)
DDE
DD
Min.
–
-1
-1
V
=-6mA (Type2),
DD
-0.4
=Min.
DD
–
=Min.
2.0
–
1.1
0.6
0.1
80
Other than DSIO
40
DSIO
40
–
–
–
=0V, Ta=-40°C to +85°C)
SS
Typ.
Max.
Unit
–
1
µA
–
1
µA
–
–
V
–
0.4
V
–
–
V
–
1.0
V
–
4.0
V
–
3.1
V
–
–
V
–
–
V
–
0.8
V
120
288
k
60
144
k
–
10
pF
–
10
pF
–
10
pF
Typ.
Max.
Unit
–
90
µA
–
1
µA
–
1
µA
–
–
V
–
0.4
V
–
–
V
–
0.8
V
–
2.4
V
–
1.8
V
–
–
V
200
480
k
100
240
k
100
240
k
–
10
pF
–
10
pF
–
10
pF
A-73
A-1
A-8
Advertisement
Table of Contents
