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Table 16.
Power Specifications for the Intel
(Sheet 2 of 2)
Symbol
P
SLP
T
J
Notes:
1.
The TDP specification should be used to design the processor thermal solution.
The TDP is not the maximum theoretical power the processor can generate.
2.
Not 100% tested. These power specifications are determined by characterization
of the processor currents at higher temperatures and extrapolating to 50 C.
3.
As measured by the activation of the on-die Intel Thermal Monitor. The Intel
Thermal Monitor's automatic mode is used to indicate that the maximum T
been reached. Refer to
4.
The Intel Thermal Monitor automatic mode must be enabled for the processor to
operate within specifications.
5.1
Thermal Specifications
The Intel
monitoring die temperature, the Digital Thermal Sensor, Intel Thermal Monitor and the
Thermal Diode. The Intel Thermal Monitor (detailed in
determine when the maximum specified processor junction temperature has been
reached.
5.1.1
Thermal Diode
The processor incorporates an on-die PNP transistor whose base emitter junction is
used as a thermal "diode", with its collector shorted to ground. The thermal diode, can
be read by an off-die analog/digital converter (a thermal sensor) located on the
motherboard, or a stand-alone measurement kit. The thermal diode may be used to
monitor the die temperature of the processor for thermal management or
instrumentation purposes but is not a reliable indication that the maximum operating
temperature of the processor has been reached. When using the thermal diode, a
temperature offset value must be read from a processor Model Specific Register (MSR)
and applied. Refer to
thermal diode usage recommendation when the PROCHOT# signal is not asserted.
Note:
The reading of the external thermal sensor (on the motherboard) connected to the
processor thermal diode signals, does not necessarily reflect the temperature of the
hottest location on the die. This is due to inaccuracies in the external thermal sensor,
on-die temperature gradients between the location of the thermal diode and the hottest
location on the die, and time based variations in the die temperature measurement.
Time based variations can occur when the sampling rate of the thermal diode (by the
thermal sensor) is slower than the rate at which the T
Offset between the thermal diode based temperature reading and the Intel Thermal
Monitor reading may be characterized using the Intel Thermal Monitor's Automatic
mode activation of thermal control circuit. This temperature offset must be taken into
account when using the processor thermal diode to implement power management
events. This offset is different than the diode T
®
Celeron
Table
17,
different sets of "diode" parameters are listed in
(Table
18) apply to traditional thermal sensors that use the Diode Equation to
determine the processor temperature. Transistor Model parameters
been added to support thermal sensors that use the transistor equation method. The
®
®
Intel
Celeron
Processor 1.66 GHz/1.83 GHz
DS
62
®
®
Intel
Celeron
Processor 1.66 GHz/1.83 GHz—Thermal Specifications and Design
Core Frequency & Voltage
Sleep Power
Junction Temperature
Section 5.1
®
®
Celeron
Processor 1.66 GHz/1.83 GHz incorporates three methods of
Section 5.1.2
Processor 1.66 GHz/1.83 GHz Model Specific Register (MSR).
Table
18, and
Table 19
®
®
Celeron
Processor 1.66 GHz/1.83 GHz
Thermal Design
Power
0
for more details.
Section
for more details. Please refer to
temperature can change.
J
value programmed into the Intel
offset
provide the "diode" interface and specifications. Two
Table
18. The Diode Model parameters
Considerations
Unit
Notes
14.8
W
2
100
3
°C
has
J
5.1.3) must be used to
Section 5.1.3
for
(Table
19) have
January 2007
Order Number: 315876-002
®
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