Holtek BS66F340C Manual page 41

BS66F340C/BS66F350C/BS66F360C
Touch A/D Flash MCU
Read Data Word from FD0H/FD0L
(1 word/time)
Flash Memory
FARH/FARL
Word m
=FA11~FA0
FD0H FD0L
Note: "m" is specified by FA11~FA0
Flash Memory IAP Read/Erase/Write Structure – BS66F340C
Read data word to FD0H/FD0L
Flash Memory
FARH/FARL
Word m
=FA12~FA0
FD0H
Note: "m" is specified by FA12~FA0
Flash Memory IAP Read/Write Structure – BS66F350C
Rev. 1.11
Erase Page FARH
254 0011 1111
255 0011 1111
Erase Page Number and Selection – BS66F360C
Write Block Data to FDxL/FDxH
(256 words/block)
Flash Memory
Block addr.
FARH/FARL
=FA11~FA8
Block n
=FA11~FA0
Write unit addr.
=FA7~FA2
FD0H
FD1H
FD2H
FD3H
Note: "n" is specified by FA11~FA8
Erase Block Data
(256 words/block)
Flash Memory
FARH/FARL
Block n
=FA11~FA0
Note: "n" is specified by FA11~FA8
FARH/FARL
=FA12~FA0
FD0L
41
FARL[7:6] FARL[5:0]
10 xx xxxx
11 xx xxxx
"x": don't care
11b
FD0L
10b
FD1L
FD2L
01b
FD3L
00b
Write Unit Data to FDxL/FDxH
(4 words/time)
Flash Memory
Write unit addr.
FARH/FARL =FA11~FA2
=FA11~FA0
FA1~FA0
=00~11b
FD0H
FD1H
FD2H
FD3H
Note: "i" is specified by FA11~FA2
Write page data to FD0L/FD0H
(32 words/page)
Flash Memory
Page addr.
=FA12~FA5
Page n
Write buffer addr.
=FA4~FA0
Write Buffer
CLWB
FD0H FD0L
Note: "n" is specified by FA12~FA5
November 09, 2023
Unit i
FD0L
FD1L
FD2L
FD3L
00000b
11111b