Holtek BS66F340C Manual page 30

Memory Characteristics
Symbol Parameter
V Read / Write Operating Voltage
DD
Flash Program / Data EEPROM Memory
t Write Cycle Time – Data EEPROM Memory
DEW
Cell Endurance – Flash Program Memory
E
P
Cell Endurance – Data EEPROM Memory
t ROM Data Retention Time
RETD
RAM Data Memory
V RAM Data Retention Voltage
DR
LVR/LVD Electrical Characteristics
Symbol Parameter
V Low Voltage Reset Voltage
LVR
V Low Voltage Detection Voltage
LVD
I Operating Current
LVRLVDBG
t LVDO Stable Time
LVDS
t Minimum Low Voltage Width to Reset
LVR
t Minimum Low Voltage Width to Interrupt —
LVD
I Additional Current for LVR Enable
LVR
Rev. 1.11
BS66F340C/BS66F350C/BS66F360C
Touch A/D Flash MCU
Ta=-40°C~85°C, unless otherwise specified.
Test Conditions
V Conditions
DD
— —
— —
— —
— —
— Ta=25°C
— Device in SLEEP Mode
Test Conditions
V Conditions
DD
— LVR enable, voltage select 2.1V
— LVR enable, voltage select 2.55V
— LVR enable, voltage select 3.15V
— LVR enable, voltage select 3.8V
— LVD enable, voltage select 2.0V
— LVD enable, voltage select 2.2V
— LVD enable, voltage select 2.4V
— LVD enable, voltage select 2.7V
— LVD enable, voltage select 3.0V
— LVD enable, voltage select 3.3V
— LVD enable, voltage select 3.6V
— LVD enable, voltage select 4.0V
3V LVD enable, LVR enable,
VBGEN=0
5V
3V LVD enable, LVR enable,
VBGEN=1
5V
For LVR enable, VBGEN=0,
—
LVD off → on
— —
—
— LVD disable, VBGEN=0
30
Min. Typ. Max. Unit
V — V V
DDmin DDmax
— 4 6 ms
10K — — E/W
100K — — E/W
— 40 — Year
1.0 — — V
Ta=-40°C~85°C
Min. Typ. Max. Unit
2.1
2.55
-5% +5% V
3.15
3.8
2.0
2.2
2.4
2.7
-5% +5% V
3.0
3.3
3.6
4.0
— — 18
μA
— 20 25
— — 150
μA
— 180 200
— — 18 μs
120 240 480 μs
60 120 240 μs
— — 24 μA
November 09, 2023