Quectel LTE-A Series Hardware Design page 21

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OTG_PWR_
143
EN*
(U)SIM Interface
Pin Name
Pin No.
USIM_GND
24
USIM_VDD
26
USIM_DATA
29
USIM_CLK
27
USIM_RST
28
USIM_DET
25
EG060V-EA_Hardware_Design
DO
OTG power control
I/O
Description
Dedicated ground
for (U)SIM card
(U)SIM card power
PO
supply
IO
(U)SIM card data
DO
(U)SIM card clock
DO
(U)SIM card reset
DI
(U)SIM card
LTE-A Module Series
EG060V-EA Hardware Design
V
max = 2.0 V
IH
V
max = 0.45 V
OL
V
min = 1.35 V
OH
DC Characteristics Comment
For 1.8 V (U)SIM:
Vmax = 1.9 V
Vmin = 1.7 V
Either 1.8 V or 3.0 V is
supported by the
For 3.0 V (U)SIM:
module automatically.
Vmax = 3.05 V
Vmin = 2.75 V
I
max = 50 mA
O
For 1.8 V (U)SIM:
V
max = 0.36 V
IL
V
min = 1.26 V
IH
V
max = 0.4 V
OL
V
min = 1.45 V
OH
For 3.0 V (U)SIM:
V
max = 0.57 V
IL
V
min = 2.0 V
IH
V
max = 0.4 V
OL
V
min = 2.3 V
OH
For 1.8 V (U)SIM:
V
max = 0.4 V
OL
V
min = 1.45 V
OH
For 3.0 V (U)SIM:
V
max = 0.4 V
OL
V
min = 2.3 V
OH
For 1.8 V (U)SIM:
V
max = 0.4 V
OL
V
min = 1.45 V
OH
For 3.0 V (U)SIM:
V
max = 0.4 V
OL
V
min = 2.3 V
OH
V
min = -0.3 V
1.8 V power domain.
IL
20 / 82

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