Bender ISOMETER isoEV425 Manual page 38

HiS Display

± R kΩ

C μF

~ ± U L1 L2

± U L1

± U L2

± R
-
U R = kΩ
 : The measured value can be displayed in the history memory
38
Insulation resistance
1 kΩ ... 1 MΩ
System leakage capacitance
1 μF ... 10 μF (isoEV425)
1 μF ... 25 μF (isoEV425HC)
Nominal system voltage L1 - L2
V
0 V ... 1.20 kV
RMS
Residual voltage L1/+ - PE
V
=
0 V ... ±1.20 kV
DC
Residual voltage L2/- - PE
V
=
0 V ... ±1.20 kV
DC
Fault location in %
-100 % ...+100 %
Indication only from U
%
R = (200 % * R
L1F
R = (200 % * R
L2F
Insulation resistance
1 kΩ ... 1 MΩ
R is an approximate value for asymmetrical insula-
UGF
tion faults and can be used as a trend indicator with
short measuring times. It is determined by the DC mains
voltage ( > 50 V ) and is only correct in the event of one-
sided insulation faults. If there are simultaneous insula-
tion faults at L1/+ and L2/- the value is indicated as a too
high impedance.
Operation of the device
Description
R
F
Resolution 1 kΩ
Resolution 1 μF
Resolution 1 V
RMS
U
Resolution 1 V
DC
U
Resolution 1 V
DC
≥ 100 V
n DC
) / (100 % + x %)
F
) / (100 % - x %)
F
R
UGF
Resolution 1 kΩ
isoEV425_D00126_09_M_XXEN/03.2019
C
e
U
n
/10 V
RMS
L1e
/10 V
DC
L2e
/10 V
DC
.
RMS
DC
DC