Cypress Ferroelectric Ram (F-Ram) - Cypress CY8CKIT-042-BLE User Manual

Hardware
5.1.9

Cypress Ferroelectric RAM (F-RAM)

The BLE Pioneer Baseboard contains an F-RAM device (FM24V10-G) (see
accessed through I
Mbit (128 KB) with an I
bits wide, and the LSB two bits are configurable through physical pins and are hardwired to 00 on the
board. By default, the address of the F-RAM device used on the BLE Pioneer Baseboard is 0x50.
This address can be modified by changing the R32/R36 and R33/R37 pairs. The operating voltage
range of the F-RAM is between 2 V and 3.6 V. To prevent the application of 5 V from the adjustable
LDO regulator on the BLE Pioneer Baseboard, a MOSFET based protection circuit similar to the one
used for the 3.3-V rail is connected between the output of the regulator and the VDD pin of the F-
RAM. The protection circuit cuts off the power to the F-RAM when the output of the regulator is
greater than 3.6 V.
Figure 5-18. Schematics and Board Highlight of F-RAM
100
2
C lines P5[0] and P5[1] of the PSoC 4 BLE/PRoC BLE Module. The F-RAM is 1-
2
C speed up to 1 Mbps. The I
CY8CKIT-042-BLE Bluetooth® Low Energy (BLE) Pioneer Kit Guide, Doc. # 001-93731 Rev. *C
Figure
2
C slave address of the F-RAM device is seven
5-18) that can be