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FEATURES
•
10 years minimum data retention in the
absence of external power
•
Data is automatically protected during power
loss
•
Directly replaces 2k x 8 volatile static RAM
·
or EEPROM
•
Unlimited write cycles
•
Low-power CMOS
•
JEDEC standard 24-pin DIP package
•
Read and write access times as fast as 100 ns
•
Full
±
10% operating range
•
Optional industrial temperature range of
-40°C to +85°C, designated IND
DESCRIPTION
DS1220Y
16k Nonvolatile SRAM
PIN ASSIGNMENT
A7
A6
AS
A4
A3
A2
A1
AO
DQO
DQ1
DQ2
GND
DI
02
03
04
Os
06
07
08
09
D
10
Du
012
24
D
23
0
22
D
21
D
20
D
t9
D
18
D
110
160
ts 0
140
130
vcc
A8
A9
WE
OE
A10
CE
DQ7
DQ6
DQS
DQ4
DQ3
24-Pin ENCAPSULATED PACKAGE
720-mil
EXTENDED
PIN DESCRIPTION
AO-AlO
DQO-DQ7
CE
WE
OE
Vee
GND
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (
+5V)
- Ground
The OS 1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that
constantly monitor Vee for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to
the popular bytewide 24-pin DIP standard. The DS1220Y also
matches
the pinout of the 2716 EPROM or
the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
1
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REV: 072808
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